SUM120N04-1m7l www.vishay.com vishay siliconix s14-0763-rev. b, 14-apr-14 1 document number: 62920 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 40 v (d-s) mosfet ordering information: SUM120N04-1m7l-ge3 (lead (pb)-free and halogen-free) features ? trenchfet ? power mosfet ? 100 % r g and uis tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? power supply - secondary synchronous rectification ?dc/dc converter ? power tools ? motor drive switch notes a. duty cycle 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr-4 material). d. package limited. product summary v ds (v) r ds(on) ( ) max. i d (a) d q g (typ.) 40 0.0017 at v gs = 10 v 120 190 0.0020 at v gs = 4.5 v 120 to-263 top view g d s g d s n-channel mosfet g d s absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 120 d a t c = 70 c 120 d pulsed drain current (t = 100 s) i dm 480 avalanche current i as 92 single avalanche energy a l = 0.1 mh e as 423 mj maximum power dissipation a t c = 25 c p d 375 b w t c = 25 c c 125 b operating junction and storage temperature range t j , t stg -55 to +175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 40 c/w junction-to-case (drain) r thjc 0.4
SUM120N04-1m7l www.vishay.com vishay siliconix s14-0763-rev. b, 14-apr-14 2 document number: 62920 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not su bject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 40 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 - 2.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v - - 250 na zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v - - 1 a v ds = 40 v, v gs = 0 v, t j = 125 c - - 150 v ds = 40 v, v gs = 0 v, t j = 175 c - - 5 ma on-state drain current a i d(on) v ds 10 v, v gs = 10 v 120 - - a drain-source on-s tate resistance a r ds(on) v gs = 10 v, i d = 30 a - 0.0014 0.0017 v gs = 4.5 v, i d = 20 a - 0.0015 0.0020 forward transconductance a g fs v ds = 15 v, i d = 20 a - 212 - s dynamic b input capacitance c iss v gs = 0 v, v ds = 20 v, f = 1 mhz - 11 685 - pf output capacitance c oss - 1652 - reverse transfer capacitance c rss - 733 - total gate charge c q g v ds = 20 v, v gs = 10 v, i d = 20 a - 190 285 nc gate-source charge c q gs -29- gate-drain charge c q gd -27- gate resistance r g f = 1 mhz 0.2 1.07 2.14 turn-on delay time c t d(on) v dd = 20 v, r l = 2 i d ? 10 a, v gen = 10 v, r g = 1 -1523 ns rise time c t r -1020 turn-off delay time c t d(off) -74111 fall time c t f -1220 drain-source body diode ra tings and characteristics b (t c = 25 c) pulsed current i sm --480a forward voltage a v sd i f = 10 a, v gs = 0 v - 0.8 1.5 v
SUM120N04-1m7l www.vishay.com vishay siliconix s14-0763-rev. b, 14-apr-14 3 document number: 62920 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 48 96 144 192 240 0 3 6 9 12 15 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 10 v thru 3 v v gs = 2 v 0 80 160 240 320 400 0 14 28 42 56 70 g f s -tran s conductance ( s ) i d -drain current (a) t c = 125 c t c = - 55 c t c = 25 c 0 3000 6000 9000 12 000 15 000 0 8 16 24 32 40 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss c o ss ss 0 40 80 120 160 200 0 1 2 3 4 5 6 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = - 55 c t c = 125 c t c = 25 c 0.000 0.001 0.002 0.003 0.004 0.005 0 20 40 60 80 100 120 r d s (on) -on-re s i s tance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 40 80 120 160 200 v gs - g ate-to- s ource voltage (v) q g - total g ate charge (nc) i d = 20 a v d s = 20 v
SUM120N04-1m7l www.vishay.com vishay siliconix s14-0763-rev. b, 14-apr-14 4 document number: 62920 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage drain source breakdown vs . junction temperature source-drain diode forward voltage threshold voltage safe operating area 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) -on-re s i s tance (normalized) t j - junction temperature ( c) i d = 30 a v gs gs = 10 v 0.000 0.001 0.002 0.003 0.004 0.005 0246810 r d s (on) -on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 150 c t j = 25 c 40 42 44 46 48 50 - 50 - 25 0 25 50 75 100 125 150 175 v d s -drain-to- s ource voltage (v) t j - junction temperature ( c) i d = 10 ma 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 25 c t j = 150 c -1.5 -1.1 -0.7 -0.3 0.1 0.5 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j -temperature ( c) i d = 250 a i d = 5 ma 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v d s -drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified 100 m s , 1 s , 10 s , dc limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 s i d limited
SUM120N04-1m7l www.vishay.com vishay siliconix s14-0763-rev. b, 14-apr-14 5 document number: 62920 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal impedance junction-to-case (25 c) are given for general guidelines only to enable the user to ge t a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62920 . 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 1 0.01 0.001 0.1 0.0001 sq uare wave pul s e duration ( s ) normalized effective tran s ient thermal impedance square wave pulse duration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1 0.2 0.1 duty cycle = 0.5 single pulse 0.02 0.05
package information www.vishay.com vishay siliconix revison: 30-sep-13 1 document number: 71198 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-263 (d 2 pak): 3-lead notes 1. plane b includes maximum featur es of heat sink tab and plastic. 2. no more than 25 % of l1 ca n fall above seating plane by max. 8 mils. 3. pin-to-pin coplanarity max. 4 mils. 4. *: thin lead is for sub, syb. thick lead is for sum, sym, sqm. 5. use inches as the primary measurement. 6. this feature is for thick lead. -a- -b- d1 d4 a a e b2 b e a c2 c l2 d l3 l detail ?a? e1 e2 k e3 d2 d3 6 0.010 m a m 2 pl detail a (rotated 90) s ection a-a 0 - 5 l1 l4 m c1 c b1 b inches millimeters dim. min. max. min. max. a 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 b2 0.045 0.055 1.143 1.397 c* thin lead 0.013 0.018 0.330 0.457 thick lead 0.023 0.028 0.584 0.711 c1 thin lead 0.013 0.017 0.330 0.431 thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 d 0.340 0.380 8.636 9.652 d1 0.220 0.240 5.588 6.096 d2 0.038 0.042 0.965 1.067 d3 0.045 0.055 1.143 1.397 d4 0.044 0.052 1.118 1.321 e 0.380 0.410 9.652 10.414 e1 0.245 - 6.223 - e2 0.355 0.375 9.017 9.525 e3 0.072 0.078 1.829 1.981 e 0.100 bsc 2.54 bsc k 0.045 0.055 1.143 1.397 l 0.575 0.625 14.605 15.875 l1 0.090 0.110 2.286 2.794 l2 0.040 0.055 1.016 1.397 l3 0.050 0.070 1.270 1.778 l4 0.010 bsc 0.254 bsc m - 0.002 - 0.050 ecn: t13-0707-rev. k, 30-sep-13 dwg: 5843
an826 vishay siliconix document number: 73397 11-apr-05 www.vishay.com 1 recommended minimum pads for d 2 pak: 3-lead 0.635 (16.129) recommended minimum pads dimensions in inches/(mm) 0.420 (10.668) 0.355 (9.017) 0.145 (3.683) 0.135 (3.429) 0.200 (5.080) 0.050 (1.257) return to index
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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